AN EXPERIMENTAL VERIFICATION OF NEW NON-QUASI-STATIC SMALL-SIGNAL MOSFET MODEL

Tomasz Stefanski,
R&D Marine Technology Centre, Gdynia, Poland
stafan@ctm.gdynia.pl

Wieslaw J. Kordalski,
Gdansk University of Technology, Gdansk, Poland
kord@ue.eti.pg.gda.pl

Hans Hauer,
Fraunhofer Institut Integrierte Schaltungen, Am Wolfsmantel 33, 91058 Erlangen, Germany
hauer@iis.fraunhofer.de

DOI: 10.36724/2664-066X-2021-7-4-2-6

SYNCHROINFO JOURNAL. Volume 7, Number 4 (2021). P. 2-6.

Abstract

This article presents the results of an experimental verification of the New Non-Quasi-Static (NQS) Small-Signal MOSFET Model proposed in [1,2]. This model is valid in all operating modes, from weak to strong inversion and from nonsaturation to saturation. For the purpose of verification test transistors with de-embedding, dummy structures in 0.35 m technology were designed. The procedure of de-embedding was based on the open-short [3] method, optimised for RF measurement up to 30 GHz. The results obtained have confirmed aplicability of the model for the small-signal MOSFET simulation.

Keywords: Semiconductor device modeling, RF IC Design, CMOS and BiCMOS circuit simulations, circuits for communications.

References

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